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features ? no external components except pin diode ? supply-voltage range: 4.5v to 5.5v ? high sensitivity due to automatic sensitiv ity adaption (agc) and automatic strong signal adaption (atc) ? high immunity against disturbances from daylight and lamps ? small size and innovative pad layout ? available for carrier frequencies between 33 khz to 40 khz; adjusted by zener diode fusing ? ttl and cmos compatible ? suitable minimum burst length 10 pulses/burst applications ? home entertainment applications ? home appliances ? remote control equipment 1. description the ic ata2525 is a complete ir receiver for data communication that was devel- oped and optimized for use in carrier-frequency-modulated transmission applications. the ic combines small size with high sens itivity as well as high suppression of noise from daylight and lamps. an innovative and patented pad layout offers unique flexibil- ity for assembly of ir receiver modul es. the ata2525 is available with standard carrier frequencies (33, 36, 37, 38, 40 khz) and 3 different noise suppression regula- tion types (standard, lamp, noise) covering requirements of different high-volume remote control solutions (please refer to selection guide available for ata2525/ata2526). the ata2525 operates in a supply voltage range of 4.5v to 5.5v. the function of ata2525 can be descri bed using the block diagram (see figure 1-1 on page 2 ). the input stage meets two main functions. first, it provides a suitable bias voltage for the pin diode. secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-nois e applications. after amplification by a c ontrolled g ain a mplifier (cga), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f 0 which is equivalent to the chosen carrier frequency of the input signal. the demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal infor- mation quality, i.e., unwanted pulses will be suppressed at the output pin. all this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). other special features are used to adapt to the current application to secure best transmission quality. ir receiver assp ata2525 4854g?auto?05/10
2 4854g?auto?05/10 ata2525 figure 1-1. block diagram demodulator input gnd ata2525 carrier frequency f 0 modulated ir signal min 10 pulses out vs oscillator agc/atc and digital control cga and filter micro- controller in
3 4854g?auto?05/10 ata2525 2. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond t hose indicated in the operational sections of this specification is not implied. exposure to absolute maximum rati ng conditions for extended periods may affect device reliability . parameters symbol value unit supply voltage v s ?0.3 to +6 v supply current i s 3ma input voltage v in ?0.3 to v s v input dc current at v s = 5v i in 0.75 ma output voltage v o ?0.3 to v s v output current i o 10 ma operating temperature t amb ?25 to +85 c storage temperature t stg ?40 to +125 c power dissipation at t amb = 25c p tot 30 mw 3. electrical characteristics t amb = ?25c to +85c, v s = 4.5v to 5.5v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* 1 supply 1.1 supply-voltage range v s 4.555.5v c 1 . 2 supply current i in = 0 i s 0.8 1.1 1.4 ma b 2 output 2.1 internal pull-up resistor t amb = 25c; see figure 5-7 on page 8 r pu 40 k a 2.2 output voltage low i l = 2 ma; see figure 5-7 on page 8 v ol 250 mv b 2.3 output voltage high t amb = 25c v oh v s ? 0.25 v s va 2.4 output current clamping r 2 = 0; see figure 5-7 on page 8 i ocl 8mab 3 input 3.1 input dc current v in = 0; see figure 5-7 on page 8 i in_dcmax ?85 a c 3.2 input dc current; see figure 5-1 on page 5 v in = 0; v s = 5v, t amb = 25c i in_dcmax ?530 ?960 a b *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 pu lses can appear at the pin out 2. after transformation of input current into voltage
4 4854g?auto?05/10 ata2525 3.3 minimum detection threshold current; see figure 5-2 on page 5 test signal: see figure 5-6 on page 7 v s = 5v, t amb = 25c, i in_dc = 1 a; square pp, burst n = 16, f = f 0 ; t per = 10 ms, see figure 5-6 on page 7 ; ber = 50 (1) i eemin ?600 pa b 3.4 minimum detection threshold current with ac current disturbance iin_ac100 = 3 a at 100 hz test signal: see figure 5-6 on page 7 v s = 5v, t amb = 25c, i in_dc = 1 a, square pp, burst n = 16, f = f 0 ; t per = 10 ms, see figure 5-6 on page 7 ; ber = 50% (1) i eemin ?850 pa c 3.5 maximum detection threshold current test signal: see figure 5-6 on page 7 v s = 5v, t amb = 25c, i in_dc = 1 a; square pp, burst n = 16, f = f 0 ; t per = 10 ms, see figure 5-6 on page 7 ; ber = 5% (1) i eemax ?400 a d 4 controlled amplifier and filter 4.1 maximum value of variable gain (cga) v s = 5v, t amb = 25c g varmax 51 db d 4.2 minimum value of variable gain (cga) v s = 5v, t amb = 25c g varmin ?5 db d 4.3 total internal amplification (2) v s = 5v, t amb = 25c g max 71 db d 4.4 center frequency fusing accuracy of bandpass v s = 5v, t amb = 25c f 0_fuse ?3 f 0 +3 % a 4.5 overall accuracy center frequency of bandpass f 0 ?6.7 f 0 +4.1 % c 4.6 bpf bandwidth ?3 db; f 0 = 38 khz; see figure 5-4 on page 6 b3.5khzb 3. electrical characteristics (continued) t amb = ?25c to +85c, v s = 4.5v to 5.5v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 pu lses can appear at the pin out 2. after transformation of input current into voltage
5 4854g?auto?05/10 ata2525 4. reliability electrical qualification (1000h at 150c) in molded so8 plastic package 5. typical electrical curves at t amb = 25c figure 5-1. v in versus i in_dc , v s = 5v figure 5-2. i eemin versus i in_dc , v s = 5v 2 2.94 2.79 2.44 1.14 1 0.1 0.0 0 3 i in_dc (a) v in (v) 1.0 1000.0 100.0 10.0 0 1 10 100 0.1 1.0 1000.0 100.0 10.0 i in_dc (a) i eemin (na) 0.49 3.6 1.2
6 4854g?auto?05/10 ata2525 figure 5-3. data transmission rate, v s = 5v figure 5-4. typical bandpass curve q = f 0 / f; f = ?3 db values. example: q = 1/(1.047 ? 0.954) = 11 1750 1500 750 0 250 500 1000 1250 4 4 40 36 32 28 f 0 (khz) bits/s noise type 1119 1418 980 730 1493 931 693 547 735 lamp type standard type 1.1 0.8 0.9 0.4 0.5 0.98 1.00 1.04 1.06 1.08 1.02 0.96 0.94 0.92 0.6 0.7 1.0 f/f 0 relative amplitude f -3 db -3 db
7 4854g?auto?05/10 ata2525 figure 5-5. illustration of used terms example: f = 30 khz, burst with 16 pulses, 16 periods figure 5-6. test circuit 116 envelope 16 t envelope 1 17056 s/data word telegram pause data word data word in out out 533 s 17 ms 33 s 533 s t doff t rep = 62 ms t don burst (n = 16 pulses) 7 7 7 1066 s period (p = 16) 1 nf 16 u2 dc u1 i in_dc i in v pulse i pin_ac100 i ee f 0 i in_dc = u2/40 k r 1 = 220 i ee = u1/400 k t per = 10 ms v dd = 5v c 1 = 4.7 f 20 k - + 20 k 1 nf gnd out + ata2525 in vs 400 k
8 4854g?auto?05/10 ata2525 figure 5-7. application circuit i in_dc i in v in v o i ee i s i ocl i l r 1 = 220 c 2 (1) 470 pf r 2 (1) > 2.4 k (1) optional c 1 = 4.7 f + gnd out microcontroller ata2525 in rpu = 40 k in vs v dd = 5v
9 4854g?auto?05/10 ata2525 6. chip dimensions figure 6-1. chip size in m note: pad coordinates are for lower left corner of the pad in m from the origin 0,0 note: 1. value depends on manufacture location. dimensions length inclusive scribe 1.04 mm width inclusive scribe 1.11 mm thickness 290 5% pads 80 80 fusing pads 60 60 pad metallurgy material alcu/alsiti (1) thickness 0.8 m finish material si 3 n 4 /sio 2 (1) thickness 0.7/0.3 m 0,0 990,960 scribe width length ata2525 out versioning 393,839 224,495 47,72 603,828 zapping in vs gnd
10 4854g?auto?05/10 ata2525 notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40 khz) 2. maximum data transmission rate up to bits/s with f 0 = 40 khz, v s = 5v (see figure 5-2 on page 5 ) 8. pad layout figure 8-1. pad layout 7. ordering information delivery: unsawn wafers (ddw) in box extended type number d (2) type ata2525s1xx (1) c-ddw 1493 standard type: high data rate ata2525s3xx (1) c-ddw 980 lamp type: enhanced suppression of disturbances, secure data transmission ata2525s5xx (1) c-ddw 730 noise type: best suppression of disturbances, low data rate table 8-1. pin description symbol function out data output vs supply voltage gnd gnd in input pin diode zapping f 0 adjust versioning type adjust gnd in out zapping vs ata2525 versioning
11 4854g?auto?05/10 ata2525 9. revision history please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. revision no. history 4854g-auto-05/10 ? page 3: thermal resistance table deleted ? page 3 and 4: pin column in electrical characteristics table deleted 4854f-auto-09/09 ? put datasheet in newest template ? ordering information table changed 4854e-auto-10/06 ? features on page 1 changed ? applications on page 1 changed ? section 1 ?description? on page 1 changed ? section 2 ?pin configuration? on page 2 deleted ? section 4 ?electrical characteristics? number 3.3 on page 4 changed ? section 4 ?electrical characteristics? number 3.4 on page 4 changed ? section 6 ?esd? on page 5 deleted ? section 10 ?ordering information? on page 10 changed 4854d-auto-04/06 ? put datasheet in a new template ? section 10 ?ordering information? on page 10 changed
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